Evaluation of Low Voltage Rectifier Design Using IGBT, MOSFET, and GaN FETs

Abstract

The adoption of IoT enabled devices have led to higher risks of EMI issues, especially in their power management. Particularly, rectifiers for IoT devices are especially concerning. To mitigate this, one approach is to use wide-bandgap semiconductor devices for power management, which reduces the devices’ susceptibility and emission of conducted EMI. One such example are GaN semiconductors. However, for low voltage, low frequency systems, the literature concerning GaN performance with regards to conducted EMI have been sparse. This is particularly important for industries such as the medical field which might require low voltage power circuits with components more adept to handling EMI. In this paper, an evaluation will be carried out to compare transistors’ performance in the design of a low voltage, low frequency rectifier of 12 Vac at 50 Hz. The results of the simulation using IGBT, GaN FETs and MOSFETs are then shown and discussed.