Towards an understanding of electrically active carbon interstitial defects in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs

ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003. Pub Date : 2003-09-16 DOI:10.1109/ESSDERC.2003.1256866

O. Weber, F. Ducroquet, L. Militaru, T. Ernst, J. Hartmann, Jean-Bernard Bouche, D. Laffond, L. Brevard, P. Holliger, S. Deleonibus

引用次数: 1

Abstract

A comprehensive interface defect identification in Si/sub 1-y/C/sub y/ buried channel n-MOSFETs is presented. Interface state density (D/sub it/) and trapped oxide charges (Q/sub ox/) are characterized by capacitive and charge pumping measurements. We show the predominant role of the interstitial carbon related defects C/sub s/-C/sub i//sup +/ and C/sub i//sup -/ on the interface degradation. Moreover, the boron impact on these carbon interface defects is investigated. Carbon incorporation into the oxide during surface oxidation is also discussed.

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Si/sub - 1-y/C/sub -y/埋沟道n- mosfet中电活性碳间隙缺陷的研究

提出了Si/sub - 1-y/C/sub -y/埋沟道n- mosfet界面缺陷的综合识别方法。界面态密度(D/sub - it/)和捕获氧化物电荷(Q/sub - ox/)通过电容性和电荷泵送测量来表征。研究结果表明，间隙碳相关缺陷C/sub s/-C/sub i//sup +/和C/sub i//sup -/对界面降解起主导作用。此外，还研究了硼对碳界面缺陷的影响。还讨论了表面氧化过程中碳与氧化物的掺入。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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ESSDERC '03. 33rd Conference on European Solid-State Device Research, 2003.

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