A 512 kB MONOS type flash memory module embedded in a microcontroller

2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408) Pub Date : 2003-06-12 DOI:10.1109/VLSIC.2003.1221205

T. Tanaka, H. Tanikawa, T. Yamaki, Y. Umemoto, A. Kato, Y. Shinagawa, M. Hiraki

引用次数: 14

Abstract

We present a 512 kB MONOS type flash memory module embedded in a microcontroller fabricated with a 0.18 /spl mu/m CMOS process. Our new memory cell structure enables the whole read path in the module to be composed of low voltage transistors that are the same as those used in the CPU core, and therefore achieves compact layout of peripheral circuits. The module achieves 34 MHz random access read operation. The measured program time and erase time for a 64 kB block were less than 4 ms and less than 11 ms, respectively. The area of the 512 kB module is 5.4 mm/sup 2/.

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在微控制器内嵌的512 kB MONOS型快闪记忆体模组

我们提出了一个512 kB的MONOS型闪存模块，嵌入在一个微控制器中，采用0.18 /spl mu/m CMOS工艺制造。我们的新存储单元结构使模块中的整个读取路径由与CPU核心相同的低压晶体管组成，从而实现了外围电路的紧凑布局。该模块实现了34 MHz的随机读取操作。测量到的64 kB块的程序时间和擦除时间分别小于4 ms和11 ms。512kb的单板面积为5.4 mm/sup 2/。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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2003 Symposium on VLSI Circuits. Digest of Technical Papers (IEEE Cat. No.03CH37408)

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