{"title":"Study of shot noise in a double barrier resonant tunneling structure","authors":"M. M. Jahan, A. Anwar","doi":"10.1109/CORNEL.1993.303086","DOIUrl":null,"url":null,"abstract":"Shot noise is calculated in a double barrier resonant tunneling structure (DBRTS) by taking the space charge accumulated inside the quantum well into account. The calculation is self-consistent in nature and is obtained by simultaneously solving the Schrodinger and Poisson's equations. The calculation manifests the suppression of shot noise in the positive differential resistance (PDR) region and an enhancement in the negative differential resistance region (NDR) of the DBRTS. The behavior is explained in terms of the fluctuation of the eigen energy of the structure due to the stored charge in the quantum well.<<ETX>>","PeriodicalId":129440,"journal":{"name":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1993-08-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CORNEL.1993.303086","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Shot noise is calculated in a double barrier resonant tunneling structure (DBRTS) by taking the space charge accumulated inside the quantum well into account. The calculation is self-consistent in nature and is obtained by simultaneously solving the Schrodinger and Poisson's equations. The calculation manifests the suppression of shot noise in the positive differential resistance (PDR) region and an enhancement in the negative differential resistance region (NDR) of the DBRTS. The behavior is explained in terms of the fluctuation of the eigen energy of the structure due to the stored charge in the quantum well.<>
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