Experimental Investigation and Analytical Modeling of Half-Bridge Switching Losses in Reconfigurable Lithium-Ion Cells

Christian Hanzl, J. Stöttner, M. Hölzle, C. Endisch
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Abstract

This paper investigates the accuracy of several analytical MOSFET loss models in half-bridge configuration. As voltage source is an automotive lithium-ion cell used as done in cascaded multilevel inverters. A standard capacitance-limited model as well as two models that take the loop inductance into account are evaluated and compared to experimental data. Results show that the relative root mean square error of the capacitance-limited model has an error of up to 49.5 % while models that take the loop inductance into account dont get better than 17.7 %. A new loss model is proposed which achieves errors as low as 8.0 % while also being more intuitive. A detailed breakdown of the proposed model reveals the cause of the small error, as well as how to further improve it.
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可重构锂离子电池半桥开关损耗的实验研究与分析建模
本文研究了几种分析型MOSFET损耗模型在半桥结构下的精度。作为电压源,汽车锂离子电池用作级联多电平逆变器。对一个标准电容限制模型和两个考虑环路电感的模型进行了评估,并与实验数据进行了比较。结果表明,电容限制模型的相对均方根误差可达49.5%,而考虑回路电感的模型误差不超过17.7%。提出了一种新的损耗模型,误差低至8.0%,同时更加直观。对该模型的详细分析揭示了产生小误差的原因,以及如何进一步改进它。
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