Low Temperature Polycrystalline Silicon Thin Film Synaptic Transistor with Bilingual Plasticity for Neuromorphic Computing

Abstract

This work reports an artificial synapse based on the dual-gate low temperature polycrystalline silicon (LTPS) thin film transistor (TFT). Basic bilingual synaptic behaviors including excitatory postsynaptic current (EPSC) and inhibitory postsynaptic current (IPSC) have been successfully realized by simple means of electric pulse stimulation. Most importantly, the strength of the excitatory and inhibitory responses can be controlled by the electrical biases at the bottom gate, which severs as a modulatory terminal. These results indicate the mature mainstream TFT technology could find its special fundamental role in the emerging non von Neumann neuromorphic computing field.