R. Fehse, S. Sweeney, A. Adams, D. McConville, H. Riechert, L. Geelhaar
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引用次数: 0
Abstract
We show that the dramatic changes in threshold current density with changing active region growth temperature in 1.3 /spl mu/m GaInNAs-based lasers can be attributed nearly entirely to changes in the defect related monomolecular recombination current.
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