The correlation of highly accelerated Q/sub bd/ tests to TDDB life tests for ultra-thin gate oxides

Y. Chen, J. Suehle, Chi-cheong Shen, J. Bernstein, C. Messick, P. Chaparala
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引用次数: 11

Abstract

A new technique is proposed to extract long-term constant voltage stress time-dependent dielectric breakdown (TDDB) acceleration parameters from highly accelerated constant or ramped current injection breakdown tests. It is demonstrated that an accurate correlation of highly accelerated breakdown tests to long-term constant voltage TDDB tests can be obtained.
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超薄栅极氧化物高加速Q/sub / bd/试验与TDDB寿命试验的相关性
提出了一种从高加速恒流或斜流注入击穿试验中提取长期恒压应力时变介质击穿加速参数的新方法。结果表明,高加速击穿试验与长期恒压TDDB试验具有较好的相关性。
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