Stanislav Scheier, Dominik Deelmann, S. Frei, C. Widemann, W. Mathis
{"title":"A combined time and frequency domain characterization method for modeling of overvoltage protection elements","authors":"Stanislav Scheier, Dominik Deelmann, S. Frei, C. Widemann, W. Mathis","doi":"10.1109/ISEMC.2015.7256368","DOIUrl":null,"url":null,"abstract":"Nonlinear voltage sensitive protection elements, e.g. Multi-Layer Varistor (MLV) or Transient Voltage Suppressor (TVS) are useful to protect IC pins from ESD on System Level. Such elements might exhibit a significant voltage overshoot for fast transients. This work describes a combined time and frequency domain characterization method and its application to an MLV. Impedance measurements with VNA at different DC-bias points are used for model identification and parameterization. The static nonlinear IV-behavior of nonlinear model part at higher voltages and currents is extrapolated with a TLP IV-curve. The model is successfully validated with ESD pulses in time domain. The transient behavior including the occurring voltage overshoot can be reproduced with high accuracy.","PeriodicalId":412708,"journal":{"name":"2015 IEEE International Symposium on Electromagnetic Compatibility (EMC)","volume":"304 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-09-14","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Electromagnetic Compatibility (EMC)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISEMC.2015.7256368","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Nonlinear voltage sensitive protection elements, e.g. Multi-Layer Varistor (MLV) or Transient Voltage Suppressor (TVS) are useful to protect IC pins from ESD on System Level. Such elements might exhibit a significant voltage overshoot for fast transients. This work describes a combined time and frequency domain characterization method and its application to an MLV. Impedance measurements with VNA at different DC-bias points are used for model identification and parameterization. The static nonlinear IV-behavior of nonlinear model part at higher voltages and currents is extrapolated with a TLP IV-curve. The model is successfully validated with ESD pulses in time domain. The transient behavior including the occurring voltage overshoot can be reproduced with high accuracy.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
