A 39 dB DR CMOS log-amp RF power detector with ±1.1 dB temperature drift from −40 to 85°C

E. Muijs, P. Silva, A. V. Staveren, W. Serdijn
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引用次数: 7

Abstract

This paper presents a temperature compensated logarithmic amplifier (log-amp) RF power detector implemented in CMOS 0.18μm technology. The input power can range from -50 to +10 dBm for RF signals ranging from 100MHz to 1.5 GHz. This design attains a typical DR of 39 dB for a ±1 dB log-conformance error (LCE). Up to 900MHz the temperature drift is never larger than ±1.1 dB for all 24 measured samples over a temperature range from -40 to +85°C. The current consumption is 6.3mA from a 1.8V power supply and the chip area is 0.76mm2.
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39 dB DR CMOS对数放大器RF功率检测器,温度漂移±1.1 dB,范围为- 40至85°C
提出了一种基于CMOS 0.18μm工艺的温度补偿对数放大器射频功率检测器。输入功率范围为-50 ~ + 10dbm,适用于100MHz ~ 1.5 GHz的射频信号。该设计在±1 dB日志一致性误差(LCE)下实现了39 dB的典型DR。在900MHz的温度范围内,所有24个测量样品的温度漂移从不大于±1.1 dB,温度范围为-40至+85℃。电流消耗为6.3mA,来自1.8V电源,芯片面积为0.76mm2。
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