Uncovering the True Defect Behind an Ambiguous Distinct PEM Hotspot Through Micro-Probing and FIB Circuit Edit-PVC Analysis

N. J. Lagatic, Jerald Santos, Jonelle Mananguit
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Abstract

In some cases, even though a distinct emission (EMMI) hotspot localized by a Photo Emission (PEM) tool and in-depth circuit analysis have established a correlation between the electrical failure, it does not guarantee that a defect will be found exactly at the EMMI site location during physical analysis. Supplementary fault localization techniques such as powered and static micro-probing complemented by circuit editing using Focused-Ion Beam (FIB) and Passive Voltage Contrast (PVC) analysis are necessary to uncover the true defect behind an ambiguous distinct PEM hotspot. Two case studies are presented in this paper to demonstrate how these supplementary techniques were exploited to successfully determine the failure mechanism and root cause.
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通过微探测和FIB电路编辑- pvc分析揭示模糊的PEM热点背后的真正缺陷
在某些情况下,尽管通过光发射(PEM)工具定位的明显发射(EMMI)热点和深入的电路分析已经建立了电气故障之间的相关性,但它并不能保证在物理分析期间精确地在EMMI站点位置发现缺陷。补充故障定位技术,如动力和静态微探针,加上使用聚焦离子束(FIB)和无源电压对比(PVC)分析的电路编辑,对于揭示模糊的PEM热点背后的真正缺陷是必要的。本文提出了两个案例研究,以演示如何利用这些补充技术成功地确定故障机制和根本原因。
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