H. Nagai, K. Kawamura, Y. Sakaida, Hiroki Uratani, Y. Shimizu, Y. Ohno, Y. Nagai, N. Shigekawa, Jianbo Liang
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引用次数: 0
Abstract
We successfully fabricate a Ga2O3/3C-SiC direct bonding by the surface-activated bonding (SAB) of 3C-SiC epitaxial layer grown on Si substrate to Ga2O3 substrate. The structure of bonding interface will be investigated by transmission electron microscope (TEM).
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