{"title":"Is SiGe the future of GaAs for RF applications?","authors":"J. Moniz","doi":"10.1109/GAAS.1997.628275","DOIUrl":null,"url":null,"abstract":"With the advent of a manufacturable Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) technology, does Gallium Arsenide (GaAs) have a future in today's high volume high frequency wireless communications marketplace? This paper describes the capabilities of IBM SiGe HBT technology as it compares to GaAs HBT and Field Effect Transistor (FET) technologies for radio frequency (RF) applications. Comparisons are made at the device, single function, and highly integrated RF integrated circuit (RFIC) level for performance and cost.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"14","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628275","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 14

Abstract

With the advent of a manufacturable Silicon Germanium (SiGe) heterojunction bipolar transistor (HBT) technology, does Gallium Arsenide (GaAs) have a future in today's high volume high frequency wireless communications marketplace? This paper describes the capabilities of IBM SiGe HBT technology as it compares to GaAs HBT and Field Effect Transistor (FET) technologies for radio frequency (RF) applications. Comparisons are made at the device, single function, and highly integrated RF integrated circuit (RFIC) level for performance and cost.
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SiGe是射频应用领域GaAs的未来吗?
随着可制造硅锗(SiGe)异质结双极晶体管(HBT)技术的出现,砷化镓(GaAs)在当今高容量高频无线通信市场中是否有未来?本文描述了IBM SiGe HBT技术的能力,因为它比较了GaAs HBT和场效应晶体管(FET)技术在射频(RF)应用中的应用。在器件级、单功能级和高度集成射频集成电路(RFIC)级对性能和成本进行了比较。
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A low distortion and high efficiency HBT MMIC power amplifier with a novel linearization technique for /spl pi//4 DPSK modulation A 600 GHz planar frequency multiplier feed on a silicon dielectric-filled parabola Device and process optimization for a low voltage enhancement mode power heterojunction FET for portable applications GaAs in the broadband infrastructure Prediction of HBT ACPR using the Gummel Poon large signal model
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