{"title":"Semiconductor-metal hybrid structures: novel perspective for read heads","authors":"M. Holz, O. Kronenwerth, D. Grundler","doi":"10.1109/ICSENS.2003.1279144","DOIUrl":null,"url":null,"abstract":"Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ultrafast read heads. Based on the finite element method, we study the EMR and optimize the effect with respect to material parameters and geometry. As the important design rule we find that the width-to-length ratio of a rectangular device should be below 0.042. This holds for a broad regime of mobility /spl mu/ in the semiconductor and specific contact resistance /spl rho//sub c/ between the semiconductor and the metal.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"45 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICSENS.2003.1279144","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Recently, it was shown that semiconductor-metal hybrid structures can exhibit a very large magnetoresistance effect, the so-called extraordinary magnetoresistance (EMR) effect. This led to the perspective of using EMR devices in magnetic-field sensors and ultrafast read heads. Based on the finite element method, we study the EMR and optimize the effect with respect to material parameters and geometry. As the important design rule we find that the width-to-length ratio of a rectangular device should be below 0.042. This holds for a broad regime of mobility /spl mu/ in the semiconductor and specific contact resistance /spl rho//sub c/ between the semiconductor and the metal.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
