Pub Date : 2003-12-01DOI: 10.1109/ICSENS.2003.1278948
Peter Li, Bo Lin, J. Gerstenmaier, Brian T Cunningham
A new method for producing label-free high-resolution images of biomolecular binding to the surface of a biosensor is demonstrated. The biosensor incorporates a guided mode resonance filter that, when illuminated with white light, is designed to reflect only a narrow band of wavelengths where the reflected wavelength is tuned by the adsorption of biological material onto the sensor surface. In this work, an instrument is used to acquire spatial maps of the resonant reflected wavelength in order to produce images of bound biomolecule patterns as applied by a microarray spotter. The biosensor imaging capability is expected to yield applications in pharmaceutical compound screening, genomics, proteomics, and molecular diagnostics, where there is a need to screen large numbers of biochemical interactions against samples using low volumes of reagents.
{"title":"A new method for label-free imaging of biomolecular interactions","authors":"Peter Li, Bo Lin, J. Gerstenmaier, Brian T Cunningham","doi":"10.1109/ICSENS.2003.1278948","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278948","url":null,"abstract":"A new method for producing label-free high-resolution images of biomolecular binding to the surface of a biosensor is demonstrated. The biosensor incorporates a guided mode resonance filter that, when illuminated with white light, is designed to reflect only a narrow band of wavelengths where the reflected wavelength is tuned by the adsorption of biological material onto the sensor surface. In this work, an instrument is used to acquire spatial maps of the resonant reflected wavelength in order to produce images of bound biomolecule patterns as applied by a microarray spotter. The biosensor imaging capability is expected to yield applications in pharmaceutical compound screening, genomics, proteomics, and molecular diagnostics, where there is a need to screen large numbers of biochemical interactions against samples using low volumes of reagents.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"423 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"126714412","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1279134
Sang-Hun Lee, D. Stubbs, J. Cairney, W. Hunt
In this paper we present evidence of detection of B. subtilis (non-pathogene models for B. anthracis) spores using a real-time, dual QCM (quartz crystal microbalance) immuno-sensing system. Device sensitivity is achieved through the use of a 10 MHz AT-cut quartz crystal operating in an enclosed flowcell. Specificity is maintained through the use of an immuno-sensing layer consisting of monoclonal antibodies specific to a single Bacillus species. The fidelity of both sensing parameters is ensured by the presence in our system of a reference device coated with an antibody that is not specific for the target antigen. Associating the QCM response signature with the specific binding of a particular species of Bacillus spore to an antibody has implications for future identification of pathogenic endospores such as B. anthracis.
{"title":"Real-time detection of bacteria spores using a QCM based immunosensor","authors":"Sang-Hun Lee, D. Stubbs, J. Cairney, W. Hunt","doi":"10.1109/ICSENS.2003.1279134","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279134","url":null,"abstract":"In this paper we present evidence of detection of B. subtilis (non-pathogene models for B. anthracis) spores using a real-time, dual QCM (quartz crystal microbalance) immuno-sensing system. Device sensitivity is achieved through the use of a 10 MHz AT-cut quartz crystal operating in an enclosed flowcell. Specificity is maintained through the use of an immuno-sensing layer consisting of monoclonal antibodies specific to a single Bacillus species. The fidelity of both sensing parameters is ensured by the presence in our system of a reference device coated with an antibody that is not specific for the target antigen. Associating the QCM response signature with the specific binding of a particular species of Bacillus spore to an antibody has implications for future identification of pathogenic endospores such as B. anthracis.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"70 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116935247","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1278982
I. Sasada, T. Usui
A new mode of operation is described for an orthogonal fluxgate built with a thin magnetic wire. In this mode, a dc bias is added to the ac excitation and the fundamental component of the induced voltage is a measure of the axially applied magnetic field. A bias switching method for reducing offset and drift is proposed for the orthogonal fluxgate operating in the new mode. Preliminary results on the resolution and the stability are presented.
{"title":"Orthogonal fluxgate magnetometer utilizing bias switching for stable operation","authors":"I. Sasada, T. Usui","doi":"10.1109/ICSENS.2003.1278982","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278982","url":null,"abstract":"A new mode of operation is described for an orthogonal fluxgate built with a thin magnetic wire. In this mode, a dc bias is added to the ac excitation and the fundamental component of the induced voltage is a measure of the axially applied magnetic field. A bias switching method for reducing offset and drift is proposed for the orthogonal fluxgate operating in the new mode. Preliminary results on the resolution and the stability are presented.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"32 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124942209","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1279014
S. Beißner, A. Wogersien, S. Buttgenbach, T. Schrader, U. Stumper
In this paper we present a new device for the measurement of the root-mean square (rms) value of high frequency (HF) voltages. The device is realized as a micromachined structure which responds to electrostatic forces caused by applied voltages. The structure has a seesaw-like geometry and is made of silicon. At frequencies much higher than the mechanical resonance frequency the system will not follow the stimulating sinusoidal waveform any more, but it is deflected according to the rms value of the HF voltage. The deflection can be determined by a wheatstone bridge consisting of two on-chip capacitors and two external resistors or by measuring a single capacitor.
{"title":"Micromechanical device for the measurement of the RMS value of high-frequency voltages","authors":"S. Beißner, A. Wogersien, S. Buttgenbach, T. Schrader, U. Stumper","doi":"10.1109/ICSENS.2003.1279014","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279014","url":null,"abstract":"In this paper we present a new device for the measurement of the root-mean square (rms) value of high frequency (HF) voltages. The device is realized as a micromachined structure which responds to electrostatic forces caused by applied voltages. The structure has a seesaw-like geometry and is made of silicon. At frequencies much higher than the mechanical resonance frequency the system will not follow the stimulating sinusoidal waveform any more, but it is deflected according to the rms value of the HF voltage. The deflection can be determined by a wheatstone bridge consisting of two on-chip capacitors and two external resistors or by measuring a single capacitor.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"92 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125399096","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1278924
Libo Yuan
A two-channel inclinometer based on the gravity-referenced rotation fiber optic sensing system is demonstrated. It measures the angle variations between a nominally vertical reference line in the civil structure and the direction of gravity. By using low-coherence fiber optic Mach-Zehnder interferometric technique, the rotations sensitivity in the two perpendicular vertical planes can be achieved in the 0.2' with the dynamics range of /spl plusmn/5/spl deg/.
{"title":"Two-channel inclinometer based on low-coherence fiber-optic Mach-Zehnder interrogation technique","authors":"Libo Yuan","doi":"10.1109/ICSENS.2003.1278924","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278924","url":null,"abstract":"A two-channel inclinometer based on the gravity-referenced rotation fiber optic sensing system is demonstrated. It measures the angle variations between a nominally vertical reference line in the civil structure and the direction of gravity. By using low-coherence fiber optic Mach-Zehnder interferometric technique, the rotations sensitivity in the two perpendicular vertical planes can be achieved in the 0.2' with the dynamics range of /spl plusmn/5/spl deg/.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"28 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"117259793","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1278902
H. Aizawa, E. Toba, T. Katsumata, S. Komuro, T. Morikawa
A variety of chromium (Cr/sup 3+/) doped phosphors has been studied for a sensor head materials in the fiber-optic thermometer, have been studied. Cr doped alumina (Cr:Al/sub 2/O/sub 3/), spinel (Cr:MgAl/sub 2/O/sub 4/) and yttrium ortho-aluminate (Cr:YAlO/sub 3/) crystals are grown using floating zone (FZ) technique. The value and temperature coefficient of photoluminescence (PL) lifetime are evaluated using the fiberoptic thermometer equipment. The value and temperature coefficient of PL lifetime vary greatly with the host materials. Among them, perovskite type Cr:YAlO/sub 3/ crystal shows the longest PL lifetime and the largest temperature coefficient. Cr doped YAlO/sub 3/ crystal is a potentially useful sensor material for fiber-optic thermometer due to long PL lifetime and large temperature coefficient of PL lifetime.
{"title":"Chromium doped phosphor based fiber-optic thermometer","authors":"H. Aizawa, E. Toba, T. Katsumata, S. Komuro, T. Morikawa","doi":"10.1109/ICSENS.2003.1278902","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278902","url":null,"abstract":"A variety of chromium (Cr/sup 3+/) doped phosphors has been studied for a sensor head materials in the fiber-optic thermometer, have been studied. Cr doped alumina (Cr:Al/sub 2/O/sub 3/), spinel (Cr:MgAl/sub 2/O/sub 4/) and yttrium ortho-aluminate (Cr:YAlO/sub 3/) crystals are grown using floating zone (FZ) technique. The value and temperature coefficient of photoluminescence (PL) lifetime are evaluated using the fiberoptic thermometer equipment. The value and temperature coefficient of PL lifetime vary greatly with the host materials. Among them, perovskite type Cr:YAlO/sub 3/ crystal shows the longest PL lifetime and the largest temperature coefficient. Cr doped YAlO/sub 3/ crystal is a potentially useful sensor material for fiber-optic thermometer due to long PL lifetime and large temperature coefficient of PL lifetime.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128596900","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1278907
F. Arregui, I. Latasa, I. Matías, R. Claus
A new type of optical fiber pH sensors has been fabricated using the electrostatic self-assembly (ESA) method. The device is based on the co-deposition of the polymer poly(allylamine hydrochloride) and the colorimetric pH indicator neutral red as the cationic monolayers, and the polymer polyfacrylic acid) that conforms the anionic monolayers. The coatings are built up monolayer by monolayer on the ends of standard communications optical fibers with a thickness of 9 nanometers per bilayer. The final structure of the coating is a homogeneous film that forms a nanoFabry-Perot interferometer. The sensing mechanism of the sensor relies on changes in the spectral response of the coating with the variations of pH. The range of measurement goes from pH 5 to 8.
{"title":"An optical fiber pH sensor based on the electrostatic self-assembly method","authors":"F. Arregui, I. Latasa, I. Matías, R. Claus","doi":"10.1109/ICSENS.2003.1278907","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278907","url":null,"abstract":"A new type of optical fiber pH sensors has been fabricated using the electrostatic self-assembly (ESA) method. The device is based on the co-deposition of the polymer poly(allylamine hydrochloride) and the colorimetric pH indicator neutral red as the cationic monolayers, and the polymer polyfacrylic acid) that conforms the anionic monolayers. The coatings are built up monolayer by monolayer on the ends of standard communications optical fibers with a thickness of 9 nanometers per bilayer. The final structure of the coating is a homogeneous film that forms a nanoFabry-Perot interferometer. The sensing mechanism of the sensor relies on changes in the spectral response of the coating with the variations of pH. The range of measurement goes from pH 5 to 8.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"128665768","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1278972
C. Cantalini, L. Valentini, I. Armentano, J. Kenny, L. Lozzi, S. Santucci
We report that carbon nanotubes (CNTs) thin films have been successfully prepared as new NO/sub 2/ and H/sub 2/ gas sensors in the NO/sub 2/ concentration range 7 ppb - 7 ppm and H2 8.5ppm - 850 ppm respectively. 150 nm thick CNTs thin films, have been prepared by rf-PECVD on Si/Si/sub 3/N/sub 4/ substrates, provided with Pt interdigital sputtered electrodes, and post-annealed under controlled conditions. The electrical response has been investigated at different operating temperatures and gases over a period of 6 months. Sensitivity response analysis has demonstrated that CNTs are more responsive to NO/sub 2/ than H/sub 2/. By selecting suitable annealing conditions, the microstructure significantly changes enabling: to adjust the base line resistance of the film (i.e. the resistance in dry air) from 100 Ohms to several mega-Ohms, and to improve gas sensitivity. Selectivity test have highlighted negligible cross sensitivity effects to the detection of NO/sub 2/, when H/sub 2/ is the interfering gas. Long term stability test have shown a neglegible increase of the base line resistance and an improvement of the NO/sub 2/ sensitivity.
{"title":"An innovative approach to gas sensing using carbon nanotubes thin films: sensitivity, selectivity and stability response analysis","authors":"C. Cantalini, L. Valentini, I. Armentano, J. Kenny, L. Lozzi, S. Santucci","doi":"10.1109/ICSENS.2003.1278972","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278972","url":null,"abstract":"We report that carbon nanotubes (CNTs) thin films have been successfully prepared as new NO/sub 2/ and H/sub 2/ gas sensors in the NO/sub 2/ concentration range 7 ppb - 7 ppm and H2 8.5ppm - 850 ppm respectively. 150 nm thick CNTs thin films, have been prepared by rf-PECVD on Si/Si/sub 3/N/sub 4/ substrates, provided with Pt interdigital sputtered electrodes, and post-annealed under controlled conditions. The electrical response has been investigated at different operating temperatures and gases over a period of 6 months. Sensitivity response analysis has demonstrated that CNTs are more responsive to NO/sub 2/ than H/sub 2/. By selecting suitable annealing conditions, the microstructure significantly changes enabling: to adjust the base line resistance of the film (i.e. the resistance in dry air) from 100 Ohms to several mega-Ohms, and to improve gas sensitivity. Selectivity test have highlighted negligible cross sensitivity effects to the detection of NO/sub 2/, when H/sub 2/ is the interfering gas. Long term stability test have shown a neglegible increase of the base line resistance and an improvement of the NO/sub 2/ sensitivity.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130380252","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1278934
A. Peczalski, D. Berndt, D. Sandquist
We present the design and performance of the gated vertical Hall sensor integrated with silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) integrated circuits. We demonstrated almost a factor of ten improvement in sensitivity over the comparable vertical Hall sensor integrated on bulk CMOS i.e. constant voltage and constant current sensitivity of 1200 V/V*T versus 130 V/V*T and 200mV/A*T versus 23 mV/A*T respectively. The high sensitivity is probably related to the inherent amplification mechanism in the gated structure. We offer our interpretation of the physical principles of the built in gain and its dependence on bias conditions.
本文介绍了一种基于硅绝缘体互补金属氧化物半导体(CMOS)集成电路的门控垂直霍尔传感器的设计和性能。我们展示了与集成在块体CMOS上的同类垂直霍尔传感器相比，灵敏度几乎提高了十倍，即恒压和恒流灵敏度分别为1200 V/V*T和130 V/V*T, 200mV/ a *T和23 mV/ a *T。高灵敏度可能与门控结构固有的放大机制有关。我们对内置增益的物理原理及其对偏置条件的依赖进行了解释。
{"title":"High sensitivity vertical Hall sensor integrated with SOI CMOS","authors":"A. Peczalski, D. Berndt, D. Sandquist","doi":"10.1109/ICSENS.2003.1278934","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1278934","url":null,"abstract":"We present the design and performance of the gated vertical Hall sensor integrated with silicon on insulator (SOI) complementary metal oxide semiconductor (CMOS) integrated circuits. We demonstrated almost a factor of ten improvement in sensitivity over the comparable vertical Hall sensor integrated on bulk CMOS i.e. constant voltage and constant current sensitivity of 1200 V/V*T versus 130 V/V*T and 200mV/A*T versus 23 mV/A*T respectively. The high sensitivity is probably related to the inherent amplification mechanism in the gated structure. We offer our interpretation of the physical principles of the built in gain and its dependence on bias conditions.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130572584","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2003-10-22DOI: 10.1109/ICSENS.2003.1279019
J. Prásek, J. Krejčí
The aim of our work is to find effective way for study of TFT biosensors electrode substrates properties during biosensors fabrication, which is crucial question for the next development of this perspective technology. A new electrochemical analytical device was developed to ensure a defined mass transport to the electrodes, which is the most limiting process that influences the response quality of the sensor. The device consists of rotating conic vessel for measured sample and the thick film amperometric sensor trenching in. This new electrochemical analytical solution was registered for patenting. The biosensors' substrate responses were tested on basic electrochemical couple of potassium ferrocyanide-ferricyanide. Thick film biosensor's substrate response dependence on the liquid velocity and geometrical arrangement is presented.
{"title":"A new possibility of thick film biosensors substrate properties measurement","authors":"J. Prásek, J. Krejčí","doi":"10.1109/ICSENS.2003.1279019","DOIUrl":"https://doi.org/10.1109/ICSENS.2003.1279019","url":null,"abstract":"The aim of our work is to find effective way for study of TFT biosensors electrode substrates properties during biosensors fabrication, which is crucial question for the next development of this perspective technology. A new electrochemical analytical device was developed to ensure a defined mass transport to the electrodes, which is the most limiting process that influences the response quality of the sensor. The device consists of rotating conic vessel for measured sample and the thick film amperometric sensor trenching in. This new electrochemical analytical solution was registered for patenting. The biosensors' substrate responses were tested on basic electrochemical couple of potassium ferrocyanide-ferricyanide. Thick film biosensor's substrate response dependence on the liquid velocity and geometrical arrangement is presented.","PeriodicalId":369277,"journal":{"name":"Proceedings of IEEE Sensors 2003 (IEEE Cat. No.03CH37498)","volume":"8 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2003-10-22","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114206073","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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