Weifeng Sun, Jing Zhu, Qinsong Qian, Bo Hou, Wei Su, Sen Zhang
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引用次数: 5
Abstract
A novel double-well (DW) divided RESURF isolation structure featuring two slender N-Well regions at N--Well, aiming at improving the off-state breakdown voltage for high voltage IC (HVIC) is proposed in this paper. The N-Well regions in the presented structure efficiently prevent N--Well which used for the drift region of the Lateral Double Diffused MOSFET (LDMOS) from depleting with P-Well, so as to maintain the RESURF condition. The experiment results show that the proposed structure exhibits the breakdown voltage of 760V which has an improvement of 15% compared with the conventional structure.
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