A 0.9 V 5 MS/s CMOS D/A converter with multi-input floating-gate MOS

Proceedings of CICC 97 - Custom Integrated Circuits Conference Pub Date : 1997-05-05 DOI:10.1109/CICC.1997.606635

L. Wong, C. Kwok, G. Rigby

引用次数: 2

Abstract

An ultra low voltage, low power CMOS D/A converter using a simple multi-input floating-gate MOSFET to perform the dual function of current source and current switch is described. The outcome of this approach is very low supply voltage operation and yet maintaining high conversion accuracy. An experimental 6-bit D/A converter has been fabricated in a standard 1.2 /spl mu/m CMOS technology with V/sub th//spl ap/0.9 V and occupies 0.63 mm/sup 2/ active area. Measurement shows a single 0.9 V supply is sufficient to operate this converter, with less than 0.46 LSB linearity error, 5 MS/s conversion rate and 320 /spl mu/W power dissipation.

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多输入浮栅MOS的0.9 V 5 MS/s CMOS D/A变换器

介绍了一种超低电压、低功耗的CMOS D/A变换器，采用简单的多输入浮栅MOSFET实现电流源和电流开关的双重功能。这种方法的结果是非常低的电源电压操作，但保持高转换精度。采用标准的1.2 /spl μ m CMOS工艺，以V/sub //spl / ap/0.9 V制作了一个6位D/A变换器，其有源面积为0.63 mm/sup / 2/。测量结果表明，一个0.9 V的电源足以运行该转换器，线性误差小于0.46 LSB，转换速率为5 MS/s，功耗为320 /spl mu/W。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Proceedings of CICC 97 - Custom Integrated Circuits Conference

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