Role of Energetic Disorder in Energy Loss of Bulk Heterojunction Organic Solar Cells

Rakesh Suthar, A. T, S. Karak
{"title":"Role of Energetic Disorder in Energy Loss of Bulk Heterojunction Organic Solar Cells","authors":"Rakesh Suthar, A. T, S. Karak","doi":"10.1109/ICEE56203.2022.10118065","DOIUrl":null,"url":null,"abstract":"The power conversion efficiency (PCE) of organic solar cells (OSCs) has recently progressed significantly with a rapid increase from 10% to 19% due to state-of-the-art research on non-fullerene acceptor molecules and various device processing strategies. However, OSCs still exhibit significant open circuit energy loss (~0.6 eV) due to disorder and excitonic nature of the organic semiconductors. In this work, we explored the role of energetic disorder on the total energy loss of bulk heterojunction OSCs. For this purpose, different donor-acceptor combinations were used to fabricate the OSCs, and various electrical characterizations were carried out in detail. The approximation of the energetic disorder was measured in term of Urbach energy (EU) from the band tail of spectra. The correlation between open circuit energy loss due to different recombination processes and Urbach energy were observed. As EU was decreased, the energy loss decreased due to more ordered molecular packing and lower energetic disorder, resulting in better device performance. These finding show the need of reducing the energetic disorder, hence lower energy losses for boosting the PCE of the OSCs.","PeriodicalId":281727,"journal":{"name":"2022 IEEE International Conference on Emerging Electronics (ICEE)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-12-11","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Emerging Electronics (ICEE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEE56203.2022.10118065","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
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Abstract

The power conversion efficiency (PCE) of organic solar cells (OSCs) has recently progressed significantly with a rapid increase from 10% to 19% due to state-of-the-art research on non-fullerene acceptor molecules and various device processing strategies. However, OSCs still exhibit significant open circuit energy loss (~0.6 eV) due to disorder and excitonic nature of the organic semiconductors. In this work, we explored the role of energetic disorder on the total energy loss of bulk heterojunction OSCs. For this purpose, different donor-acceptor combinations were used to fabricate the OSCs, and various electrical characterizations were carried out in detail. The approximation of the energetic disorder was measured in term of Urbach energy (EU) from the band tail of spectra. The correlation between open circuit energy loss due to different recombination processes and Urbach energy were observed. As EU was decreased, the energy loss decreased due to more ordered molecular packing and lower energetic disorder, resulting in better device performance. These finding show the need of reducing the energetic disorder, hence lower energy losses for boosting the PCE of the OSCs.
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能量紊乱在体异质结有机太阳能电池能量损失中的作用
近年来,由于对非富勒烯受体分子和各种器件加工策略的研究,有机太阳能电池(OSCs)的功率转换效率(PCE)迅速从10%提高到19%,取得了显著进展。然而,由于有机半导体的无序性和激子性质,OSCs仍然表现出显著的开路能量损失(~0.6 eV)。在这项工作中,我们探讨了能量无序对体异质结osc总能量损失的作用。为此,使用不同的供体-受体组合来制造OSCs,并进行了详细的各种电特性表征。从光谱的带尾用厄巴赫能(EU)来测量能量无序的近似。观察了不同复合过程引起的开路能量损失与乌尔巴赫能量之间的相关性。随着EU的降低,由于分子堆积更加有序,能量无序性降低,能量损失降低,器件性能提高。这些发现表明,需要减少能量紊乱,从而降低能量损失,以提高osc的PCE。
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