{"title":"Modeling and implementation of oxide memristors for neuromorphic applications","authors":"Ting Chang, P. Sheridan, W. Lu","doi":"10.1109/CNNA.2012.6331462","DOIUrl":null,"url":null,"abstract":"We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.","PeriodicalId":387536,"journal":{"name":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2012-10-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 13th International Workshop on Cellular Nanoscale Networks and their Applications","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CNNA.2012.6331462","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
We report the fabrication, modeling and implementation of nanoscale tungsten-oxide (WOx) memristive (memristor) devices for neuromorphic applications. The device behaviors can be predicted accurately by considering both ion drift and diffusion. Short-term memory and memory enhancement phenomena, and the effects of spike rate, timing and associativity have been demonstrated. SPICE modeling has been achieved that allows circuit-level implementations.
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