{"title":"Design of 140-GHz Frequency Single-Ended and Push-Push Doublers with 31.61dB and 91.19dB Fundamental Suppression","authors":"Xiaofei Liao, Dixian Zhao","doi":"10.1109/CICTA.2018.8705709","DOIUrl":null,"url":null,"abstract":"This paper presents the design of single-ended and push-push frequency doublers at 140 GHz. Both designs use two open quarter-wavelength fundamental frequency transmission lines at output port to provide high fundamental suppression. Compared to single-ended topology, the push-push one achieves higher fundamental suppression. The single-ended and push-push doublers show simulated fundamental suppression of 31.61 dB and 91.19 dB respectively with output power of -3.02dBm and -2.03dBm at 5dBm input power. The doublers are implemented in 100-nm GaAs technology.","PeriodicalId":186840,"journal":{"name":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"85 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-11-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/CICTA.2018.8705709","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
This paper presents the design of single-ended and push-push frequency doublers at 140 GHz. Both designs use two open quarter-wavelength fundamental frequency transmission lines at output port to provide high fundamental suppression. Compared to single-ended topology, the push-push one achieves higher fundamental suppression. The single-ended and push-push doublers show simulated fundamental suppression of 31.61 dB and 91.19 dB respectively with output power of -3.02dBm and -2.03dBm at 5dBm input power. The doublers are implemented in 100-nm GaAs technology.