A V-band High performance single-stage MMIC frequency quadrupler

B. Biswas, G. Kumar
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引用次数: 1

Abstract

Design and development of a 14.25 GHz to 57 GHz frequency quadrupler has been presented in this paper using GaAs/InGaAs/AlGaAs based pseudomorphic High Electron Mobility Transistor (pHEMT) in a single-stage, Monolithic Microwave Integrated Circuit (MMIC). Fabricated MMIC chip has achieved 5.2 dB of conversion loss at 57 GHz for 0 dBm of input power at 14.25 GHz. Saturated output power is −4.5 dBm without any output amplifier stage. Fractional bandwidth has been obtained as 7%, while output power variation is within 5 dB. DC power consumption of the circuit is only 60 mW. Fundamental and other unwanted harmonic rejection is in excess of 25 dBc. Highly stable and high quality output spectrum of the frequency quadrupler makes it suitable for Millimeter Wave (MMW) transceiver application.
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一种v波段高性能单级MMIC频率四倍器
本文利用基于GaAs/InGaAs/AlGaAs的伪晶高电子迁移率晶体管(pHEMT)在单级单片微波集成电路(MMIC)中设计和开发了14.25 GHz至57 GHz频率的四倍频器。自制的MMIC芯片在14.25 GHz频率下,以0 dBm的输入功率在57 GHz频率下实现了5.2 dB的转换损耗。饱和输出功率为- 4.5 dBm,无任何输出放大器级。分数带宽为7%,输出功率变化在5db以内。电路直流功耗仅为60mw。基波和其他不需要的谐波抑制超过25 dBc。该四倍频器的高稳定性和高质量的输出频谱使其适合于毫米波收发应用。
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