Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939620
Kinjal Parmar, Shailendra Singh
This paper reports the design of 50–60 GHz probe type waveguide to microstrip transition on LTCC substrate, which acts as an initial development towards integrated MMIC hermetic packaging in millimeter-wave systems. The transition shows a simulated return loss better than 15 dB and insertion loss less than 0.4 dB in back to back configuration. The measured insertion loss is 1.2 to 1.8 dB with return loss bettering 12 dB in the range of 50–60 GHz.
{"title":"50–60 GHz waveguide to microstrip transition on LTCC for enabling integrated MMIC packaging","authors":"Kinjal Parmar, Shailendra Singh","doi":"10.1109/IMARC.2016.7939620","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939620","url":null,"abstract":"This paper reports the design of 50–60 GHz probe type waveguide to microstrip transition on LTCC substrate, which acts as an initial development towards integrated MMIC hermetic packaging in millimeter-wave systems. The transition shows a simulated return loss better than 15 dB and insertion loss less than 0.4 dB in back to back configuration. The measured insertion loss is 1.2 to 1.8 dB with return loss bettering 12 dB in the range of 50–60 GHz.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"11 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"125377617","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939623
Sohni Jain, Vuk Vojisaveljevic, E. Pirogova
This experimental study evaluates the effects of low power microwave radiation on the growth rate of yeast Saccharomyces cerevisiae strains type II, exposed to the microwaves (MW) at the frequencies of 1800 MHz and 2100 MHz and the selected powers of −10 dBm, 0 dBm and 17 dBm using the Transverse Electro-Magnetic (TEM) cell. A comparative analysis of changes, induced by MW exposures at the particular frequencies and powers, on the growth rate of the irradiated yeast cells vs. control group was performed. The findings reveal that the selected MW exposures affected the rate of yeast cells growth. To evaluate the dependence of yeast cell growth rate on MW exposures' frequency and power, Chi-square Test was performed. The results showed that the MW radiations parameters (frequency and power) contribute independently to modulating effects observed in the yeast cells growth.
{"title":"The effects of low power microwaves at 1800 MHz and 2100 MHz on yeast cells growth","authors":"Sohni Jain, Vuk Vojisaveljevic, E. Pirogova","doi":"10.1109/IMARC.2016.7939623","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939623","url":null,"abstract":"This experimental study evaluates the effects of low power microwave radiation on the growth rate of yeast Saccharomyces cerevisiae strains type II, exposed to the microwaves (MW) at the frequencies of 1800 MHz and 2100 MHz and the selected powers of −10 dBm, 0 dBm and 17 dBm using the Transverse Electro-Magnetic (TEM) cell. A comparative analysis of changes, induced by MW exposures at the particular frequencies and powers, on the growth rate of the irradiated yeast cells vs. control group was performed. The findings reveal that the selected MW exposures affected the rate of yeast cells growth. To evaluate the dependence of yeast cell growth rate on MW exposures' frequency and power, Chi-square Test was performed. The results showed that the MW radiations parameters (frequency and power) contribute independently to modulating effects observed in the yeast cells growth.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"64 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"134430690","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939626
D. Ghosh, G. Kumar
This paper proposes two new tightly coupled 6 dB microstrip couplers for two different frequency bands with high isolation and good load dynamic range. The couplers employ quadrature mode and odd mode suppression to achieve high isolation. The first proposed coupler uses modified three branch couplers, while the second coupler uses Wilkinson power divider and rat race coupler. The measured isolation of the first coupler is above 40 dB from 723MHz to 1.2GHz, and the second coupler has isolation better than 35 dB from 1.6 to 2.6 GHz. The couplers have load dynamic ranges of 28—45 dB and 21—32 dB, from 750MHz to 1.15 GHz, and 1.7 to 2.6 GHz, respectively. The high dynamic range of these two couplers make them suitable for load sensing applications.
{"title":"Asymmetric high isolation 6 dB microstrip couplers for load sensing applications","authors":"D. Ghosh, G. Kumar","doi":"10.1109/IMARC.2016.7939626","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939626","url":null,"abstract":"This paper proposes two new tightly coupled 6 dB microstrip couplers for two different frequency bands with high isolation and good load dynamic range. The couplers employ quadrature mode and odd mode suppression to achieve high isolation. The first proposed coupler uses modified three branch couplers, while the second coupler uses Wilkinson power divider and rat race coupler. The measured isolation of the first coupler is above 40 dB from 723MHz to 1.2GHz, and the second coupler has isolation better than 35 dB from 1.6 to 2.6 GHz. The couplers have load dynamic ranges of 28—45 dB and 21—32 dB, from 750MHz to 1.15 GHz, and 1.7 to 2.6 GHz, respectively. The high dynamic range of these two couplers make them suitable for load sensing applications.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124479447","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939627
B. Biswas, G. Kumar
Design and development of a 14.25 GHz to 57 GHz frequency quadrupler has been presented in this paper using GaAs/InGaAs/AlGaAs based pseudomorphic High Electron Mobility Transistor (pHEMT) in a single-stage, Monolithic Microwave Integrated Circuit (MMIC). Fabricated MMIC chip has achieved 5.2 dB of conversion loss at 57 GHz for 0 dBm of input power at 14.25 GHz. Saturated output power is −4.5 dBm without any output amplifier stage. Fractional bandwidth has been obtained as 7%, while output power variation is within 5 dB. DC power consumption of the circuit is only 60 mW. Fundamental and other unwanted harmonic rejection is in excess of 25 dBc. Highly stable and high quality output spectrum of the frequency quadrupler makes it suitable for Millimeter Wave (MMW) transceiver application.
{"title":"A V-band High performance single-stage MMIC frequency quadrupler","authors":"B. Biswas, G. Kumar","doi":"10.1109/IMARC.2016.7939627","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939627","url":null,"abstract":"Design and development of a 14.25 GHz to 57 GHz frequency quadrupler has been presented in this paper using GaAs/InGaAs/AlGaAs based pseudomorphic High Electron Mobility Transistor (pHEMT) in a single-stage, Monolithic Microwave Integrated Circuit (MMIC). Fabricated MMIC chip has achieved 5.2 dB of conversion loss at 57 GHz for 0 dBm of input power at 14.25 GHz. Saturated output power is −4.5 dBm without any output amplifier stage. Fractional bandwidth has been obtained as 7%, while output power variation is within 5 dB. DC power consumption of the circuit is only 60 mW. Fundamental and other unwanted harmonic rejection is in excess of 25 dBc. Highly stable and high quality output spectrum of the frequency quadrupler makes it suitable for Millimeter Wave (MMW) transceiver application.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"130952030","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939631
C. Viegas, B. Alderman, C. Pérez-Moreno, J. Powell, C. Duff, R. Sloan
This paper presents the design and thermal analysis of a high-power Schottky diode frequency doubler at 160 GHz. The design is capable of achieving ∼10% 3 dB bandwidth with a peak conversion efficiency of ∼25% for an input power of 100 mW at 295 K. Thermal characterization of the design includes modelling and measurement of the power dissipation in the discrete diode under different temperatures. The results obtained from the experiments have been validated by a physics-based electro-thermal simulator for Schottky diodes.
{"title":"Design and thermal analysis of a high-power frequency doubler at 160 GHz","authors":"C. Viegas, B. Alderman, C. Pérez-Moreno, J. Powell, C. Duff, R. Sloan","doi":"10.1109/IMARC.2016.7939631","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939631","url":null,"abstract":"This paper presents the design and thermal analysis of a high-power Schottky diode frequency doubler at 160 GHz. The design is capable of achieving ∼10% 3 dB bandwidth with a peak conversion efficiency of ∼25% for an input power of 100 mW at 295 K. Thermal characterization of the design includes modelling and measurement of the power dissipation in the discrete diode under different temperatures. The results obtained from the experiments have been validated by a physics-based electro-thermal simulator for Schottky diodes.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"98 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121797898","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939635
Satyajit Panda, Z. Akhter, M. Akhtar
A novel artificial neural network (ANN) based approach for the microwave subsurface imaging of reinforced concrete structures is proposed. The proposed technique facilitates the detection of the inner configuration of test structures, and is based on measurement of reflection data using a Ka-band waveguide (WR-28) along with the network analyzer. The waveguide is directly placed in contact with the test structure, and the whole sample is scanned by moving the waveguide holder along its surface in order to measure the reflection data at various positions. The training data for the ANN is generated by simulating the complete measurement setup in the CST Microwave Studio with a typical concrete specimen. The actual measured reflection data is then fed to the previously trained ANN to produce the subsurface image of the test structure. The proposed system is validated by imaging different concrete samples using both simulated and experimental data.
{"title":"Subsurface imaging of concrete structures using neural network approach","authors":"Satyajit Panda, Z. Akhter, M. Akhtar","doi":"10.1109/IMARC.2016.7939635","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939635","url":null,"abstract":"A novel artificial neural network (ANN) based approach for the microwave subsurface imaging of reinforced concrete structures is proposed. The proposed technique facilitates the detection of the inner configuration of test structures, and is based on measurement of reflection data using a Ka-band waveguide (WR-28) along with the network analyzer. The waveguide is directly placed in contact with the test structure, and the whole sample is scanned by moving the waveguide holder along its surface in order to measure the reflection data at various positions. The training data for the ANN is generated by simulating the complete measurement setup in the CST Microwave Studio with a typical concrete specimen. The actual measured reflection data is then fed to the previously trained ANN to produce the subsurface image of the test structure. The proposed system is validated by imaging different concrete samples using both simulated and experimental data.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"27 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"133298845","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939638
Sreedevi P. Chakyar, Shanto T. A., Aathira Murali, Sikha Simon K., Nees Paul, J. Andrews, J. P
Dielectric constant variation with temperature for different wax samples is analysed with the help of split ring resonators (SRRs). The method employs a simple extraction procedure to obtain the unknown permittivity values from a calibration curve drawn between relative permittivity of standard samples and resonant frequency of SRR with each of the samples placed above it. The wax sample is placed on the SRR surface and its transmission characteristics are analysed using a vector network analyser (VNA) with its transmitting and receiving probes placed on either side of the SRR - sample system. The temperature is gradually increased from room temperature to 60°C with the help of a hot metal plate placed near the SRR. The dielectric constant of wax sample in contact with the SRR surface varies with the temperature, which in turn changes the capacitance of the SRR, resulting in a shift in its resonant frequency. The method has its advantages like simple experimental setup, direct measurement and ease of sample preparation.
{"title":"Measurement of dielectric constant of waxes at different temperatures using split ring resonator structure","authors":"Sreedevi P. Chakyar, Shanto T. A., Aathira Murali, Sikha Simon K., Nees Paul, J. Andrews, J. P","doi":"10.1109/IMARC.2016.7939638","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939638","url":null,"abstract":"Dielectric constant variation with temperature for different wax samples is analysed with the help of split ring resonators (SRRs). The method employs a simple extraction procedure to obtain the unknown permittivity values from a calibration curve drawn between relative permittivity of standard samples and resonant frequency of SRR with each of the samples placed above it. The wax sample is placed on the SRR surface and its transmission characteristics are analysed using a vector network analyser (VNA) with its transmitting and receiving probes placed on either side of the SRR - sample system. The temperature is gradually increased from room temperature to 60°C with the help of a hot metal plate placed near the SRR. The dielectric constant of wax sample in contact with the SRR surface varies with the temperature, which in turn changes the capacitance of the SRR, resulting in a shift in its resonant frequency. The method has its advantages like simple experimental setup, direct measurement and ease of sample preparation.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"114515994","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939610
N. Subramani, J. Nallatamby, A. Sahoo, R. Sommet, R. Quéré, B. Bindu
A simple analytical model which validates both intrinsic and extrinsic current-voltage characteristics of AlGaN/GaN HEMT is presented. The dependence of spontaneous and piezoelectric polarization effects at the heterointerface, applied gate bias and Al mole fraction of AlGaN layer have been taken into account for estimating the two-dimensional electron gas (2DEG) density and current characteristics. The polynomial approximation which relates EF and sheet carrier density simplifies the model for all regions of operation i.e., from subthreshold to strong inversion region. The effect of parasitic source and drain resistance are considered to predict the extrinsic HEMT characteristics. The results obtained from the analytical model are compared with experimental data and TCAD numerical simulation results, and shows good agreement, thereby proving the validity of the model.
{"title":"A physics based analytical model and numerical simulation for current-voltage characteristics of microwave power AlGaN/GaN HEMT","authors":"N. Subramani, J. Nallatamby, A. Sahoo, R. Sommet, R. Quéré, B. Bindu","doi":"10.1109/IMARC.2016.7939610","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939610","url":null,"abstract":"A simple analytical model which validates both intrinsic and extrinsic current-voltage characteristics of AlGaN/GaN HEMT is presented. The dependence of spontaneous and piezoelectric polarization effects at the heterointerface, applied gate bias and Al mole fraction of AlGaN layer have been taken into account for estimating the two-dimensional electron gas (2DEG) density and current characteristics. The polynomial approximation which relates EF and sheet carrier density simplifies the model for all regions of operation i.e., from subthreshold to strong inversion region. The effect of parasitic source and drain resistance are considered to predict the extrinsic HEMT characteristics. The results obtained from the analytical model are compared with experimental data and TCAD numerical simulation results, and shows good agreement, thereby proving the validity of the model.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"146 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"116730318","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939637
P. K. Varshney, N. Tiwari, M. Akhtar
A novel SIW cavity based RF sensor is designed and developed for non-destructive testing (NDT) of dielectric and advanced composites at 1.5 GHz using the TE101 mode. The proposed sensor is fabricated on low cost FR-4 substrate, and excitation of fabricated sensor is done with 3.5mm SMA connectors. The material testing is performed using the cavity perturbation theory for real part of the permittivity, while the loss tangent is calculated using the numerical curve fitting technique. Several standard dielectrics are tested using the proposed sensor, and the results are compared with their reported values. The designed sensor is compact having more sensitivity in comparison to other SIW sensors reported in the past with error in the real permittivity within 5%.
{"title":"SIW cavity based compact RF sensor for testing of dielectrics and composites","authors":"P. K. Varshney, N. Tiwari, M. Akhtar","doi":"10.1109/IMARC.2016.7939637","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939637","url":null,"abstract":"A novel SIW cavity based RF sensor is designed and developed for non-destructive testing (NDT) of dielectric and advanced composites at 1.5 GHz using the TE101 mode. The proposed sensor is fabricated on low cost FR-4 substrate, and excitation of fabricated sensor is done with 3.5mm SMA connectors. The material testing is performed using the cavity perturbation theory for real part of the permittivity, while the loss tangent is calculated using the numerical curve fitting technique. Several standard dielectrics are tested using the proposed sensor, and the results are compared with their reported values. The designed sensor is compact having more sensitivity in comparison to other SIW sensors reported in the past with error in the real permittivity within 5%.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"33 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"124481770","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
Pub Date : 2016-12-01DOI: 10.1109/IMARC.2016.7939625
Sohni Jain, Vuk Vojisaveljevic, E. Pirogova
With rapid development and advancement in technology, public is continuously exposed to electromagnetic radiation (EMR) emitted by radiofrequency (RF) and microwave (MW) technology devices such as mobile phones, Wi-Fi, Smart meters and different medical equipment. The exposures to high power RF and MW radiation that produce heating effects on body and tissue are already known and thoroughly studied, but there is little or negligible information about the health effects of long-term exposures to low power RF and MW radiation. With 60% penetration of mobile phone use on global population, and its increase of more than 200% in the last 10 years and expected to cross 5 billion mark by 2019, exposures to weak (low power) RF and MW used for voice and data transfer have become a significant health concern. This prompted the effort from the scientific community to evaluate the impact of long-term exposures of low power RF and MW radiation at the cellular and molecular levels and investigate the underlying mechanisms behind these effects. This study evaluated the effects of MW radiation at 1800 MHz and 2100 MHz and powers of −10 dBm, 0 dBm and 17 dBm on kinetics of Catalase enzyme, a protein playing a key role in metabolic reactions in living organisms. Our findings reveal that microwaves at 2.1GHz and selected powers induce changes in the enzyme kinetics, which lead to modulation of the rate of change in corresponding reaction this enzyme accelerates.
{"title":"Low power microwaves at 1.8GHz and 2.1 GHz induce chages in Catalase enzyme kinetics","authors":"Sohni Jain, Vuk Vojisaveljevic, E. Pirogova","doi":"10.1109/IMARC.2016.7939625","DOIUrl":"https://doi.org/10.1109/IMARC.2016.7939625","url":null,"abstract":"With rapid development and advancement in technology, public is continuously exposed to electromagnetic radiation (EMR) emitted by radiofrequency (RF) and microwave (MW) technology devices such as mobile phones, Wi-Fi, Smart meters and different medical equipment. The exposures to high power RF and MW radiation that produce heating effects on body and tissue are already known and thoroughly studied, but there is little or negligible information about the health effects of long-term exposures to low power RF and MW radiation. With 60% penetration of mobile phone use on global population, and its increase of more than 200% in the last 10 years and expected to cross 5 billion mark by 2019, exposures to weak (low power) RF and MW used for voice and data transfer have become a significant health concern. This prompted the effort from the scientific community to evaluate the impact of long-term exposures of low power RF and MW radiation at the cellular and molecular levels and investigate the underlying mechanisms behind these effects. This study evaluated the effects of MW radiation at 1800 MHz and 2100 MHz and powers of −10 dBm, 0 dBm and 17 dBm on kinetics of Catalase enzyme, a protein playing a key role in metabolic reactions in living organisms. Our findings reveal that microwaves at 2.1GHz and selected powers induce changes in the enzyme kinetics, which lead to modulation of the rate of change in corresponding reaction this enzyme accelerates.","PeriodicalId":341661,"journal":{"name":"2016 IEEE MTT-S International Microwave and RF Conference (IMaRC)","volume":"18 1","pages":"0"},"PeriodicalIF":0.0,"publicationDate":"2016-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":null,"resultStr":null,"platform":"Semanticscholar","paperid":"121772433","PeriodicalName":null,"FirstCategoryId":null,"ListUrlMain":null,"RegionNum":0,"RegionCategory":"","ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":"","EPubDate":null,"PubModel":null,"JCR":null,"JCRName":null,"Score":null,"Total":0}
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