Observation of novel conductance structure in GaAs/Ga/sub x/Al/sub 1-x/As resonant tunneling heterostructures

Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits Pub Date : 1993-08-02 DOI:10.1109/CORNEL.1993.303084

Manisha Ramesh Deshpande, N.H. Dekker, J. Sleight, J. L. Huber, E.S. Hornbeck, M. Reed, R. Matyi, Y. Kao, C. Fernando, W. Frensley

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Abstract

A novel pre-resonant conductance structure is observed in single and double well GaAs/Ga/sub x/Al/sub 1-x/As resonant tunneling heterostructures. This structure is attributed to single electron tunneling through donor bound states in the quantum well as they cross the Fermi level. Peaks in conductance are observed in devices as large as (64/spl mu/)/sup 2/. We observe for the first time donor binding energies in quantum wells as large as 35 meV, which is probably due to the formation of a donor complex. An impressive impurity tunneling conductance structure is observed in double quantum well structures with conductance peak heights varying over 3 orders of magnitude. Conductance peaks are observed before and after the main resonant current peak which are attributed to tunneling of electrons through impurities in one quantum well and the quantum state in the other well.<>

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GaAs/Ga/sub -x/ Al/sub - 1-x/As共振隧道异质结构中新型电导结构的观察

在单阱和双阱GaAs/Ga/sub -x/ Al/sub - 1-x/As谐振隧穿异质结构中观察到一种新的预共振电导结构。这种结构归因于单个电子在穿越费米能级时穿过量子阱中的供体束缚态。在大到(64/spl mu/)/sup 2/的器件中观察到电导峰值。我们首次在量子阱中观测到供体结合能达到35 meV，这可能是由于供体配合物的形成。在双量子阱结构中观察到令人印象深刻的杂质隧穿电导结构，电导峰值高度变化超过3个数量级。在主共振电流峰前后观察到电导峰，这是由于电子穿过一个量子阱中的杂质和另一个量子阱中的量子态的隧穿。

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Proceedings of IEEE/Cornell Conference on Advanced Concepts in High Speed Semiconductor Devices and Circuits

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