Transient simulation of graphene FET gated by electrolyte medium

Abstract

We present a numerical study on the electrical conduction characteristics of the graphene channel FET with electrolyte medium for gate control. By using the tight-binding formalism to calculate the electronic band structure and the Nernst-Planck-Poisson (NPP) equation to calculate the formation of the electric double layer at the interface of the ionic liquid, we found that the drain current after the EDL is formed is almost independent of the IL thickness, while the transient behavior is greatly influenced by the thickness of ionic liquid. In addition, we present our simulation results for the case of solid electrolyte gate, where the effect of finite ion concentration in the solid electrolyte has been successfully taken into account appropriately by using the extended NPP equation.