A Stochastic Modeling Framework for NBTI and TDDS in Small Area p-MOSFETs

Abstract

Kinetic Monte Carlo (KMC) simulations are used to simulate the stochastic interface trap generation recovery $(\Delta V_{IT})$ and hole trapping detrapping $(\Delta V_{HT})$ during and after Negative Bias Temperature Instability (NBTI) stress. The simulated mean of threshold voltage shift $(\Delta V_{IT}=\Delta V_{HT}+\Delta V_{HT})$ is verified against continuum simulations and mean of measured data on multiple small area devices. Simulated and measured time constants for steps of Time Dependent Defect Spectroscopy (TDDS) data and step like recovery after NBTI stress are compared and analyzed. Keywords–NBTI, HKMG, Kinetic Monte Carlo (KMC), interface trap generation, hole trapping, Reaction-Diffusion (RD) model, Non-Radiative Multi-phonon (NMP) model.