S. Kim, Jong Chul Lee, T. J. Ha, Jong Ho Lee, Jae Yeon Lee, Yong Taek Park, K. Kim, W. Ju, Younghyun Ko, H. Hwang, B. Lee, J. Y. Moon, W. Park, B. Gyun, B. Lee, D. Yim, S. Hong
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引用次数: 12
Abstract
In this paper, the authors report for the first time the outstanding selector performance from an innovative oxide selector. SiO2, one of conventional and common materials in semiconductor industry, was chosen as a matrix oxide material. Metal atoms which are non-mobile and easy to handle were injected into the oxide films. Off-current and threshold voltage (Vth) could be controlled by using arsenic (As), which doping method and concentration were carefully investigated to achieve threshold switching behavior. Finally ReRAM (Resistance switching Random Access Memory) cell array consisted of one selector-one resistor (1S1R) was successfully demonstrated with the full integration of the newly developed selector.
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