T. Nakatsuka, J. Itoh, T. Yoshida, M. Nishitsuji, T. Uda, O. Ishikawa
{"title":"Super-small and low-power front-end HIC using MBB technology for 1.9 GHz bands","authors":"T. Nakatsuka, J. Itoh, T. Yoshida, M. Nishitsuji, T. Uda, O. Ishikawa","doi":"10.1109/GAAS.1997.628254","DOIUrl":null,"url":null,"abstract":"Super-small and low-power receiver front-end hybrid IC(HIC) using Micro Bump Bonding (MBB) technology for 1.9 GHz bands has been newly developed. By using the MBB, the HIC was miniaturized to 3.5/spl times/4.0/spl times/1.0 mm, which is more than 60% of reduction as compared with the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, image rejection ratio over 20 dBc were obtained for the HIC at 1.9 GHz, 3.0 V and 4.5 mA of power supply.","PeriodicalId":299287,"journal":{"name":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","volume":"2 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1997-10-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"GaAs IC Symposium. IEEE Gallium Arsenide Integrated Circuit Symposium. 19th Annual Technical Digest 1997","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/GAAS.1997.628254","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Super-small and low-power receiver front-end hybrid IC(HIC) using Micro Bump Bonding (MBB) technology for 1.9 GHz bands has been newly developed. By using the MBB, the HIC was miniaturized to 3.5/spl times/4.0/spl times/1.0 mm, which is more than 60% of reduction as compared with the conventional one. Conversion gain of 16.0 dB, IP3 out of 0 dBm, image rejection ratio over 20 dBc were obtained for the HIC at 1.9 GHz, 3.0 V and 4.5 mA of power supply.