280.2/309.2 GHz, 18.2/9.3 dB Gain, 1.48/1.4 dB Gain-per-mW, 3-Stage Amplifiers in 65nm CMOS Adopting $\text{Double-embedded-}G_{max}\text{-core}$

Abstract

This paper reports a sub-THz high-gain amplifier design technique which is more flexible and suitable for performance optimization based on a $\text{double}\text{-}\text{embedded}\text{-}G_{max}\text{-}\text{core}$. The $\text{double}\text{-} \text{embedded} \text{-}G_{max}\text{-}\text{cort}$ is implemented by adopting an additional linear, lossless, and reciprocal (LLR) network that satisfies the $G_{max}\text{-}\text{condition} (Y_{21}/Y_{12}=\text{-}G_{max})$ on to an $N\text{-}\text{stage}\ \ \text{pseudo}\text{-}G_{max}\text{-}\text{cores}$ where each stage satisfies the stability factor $k_{i}\!\!=\!\!1$ and phase delay of $2\mathrm{m}\pi/N$. Implemented in a 65nm CMOS, the three-stage 280.2 and 309.2 GHz amplifiers achieve power gains of 18.2 and 9.3 dB and gain-per-mW of 1.48 and 1.4 dB/mW, respectively.