Study On pH-ISFET Temperature Effect Using Implemented MOS Transistor

Abstract

This paper deals with the investigation of the temperature behavior of MOS-based sensors operating in the saturation region. A MOSFET transistor was integrated together with an N-pH-ISFET and used as temperature sensor to reduce the ISFET's temperature effect. The threshold voltage shifts of the MOSFET and pH-ISFETs transistors with temperature variations have been studied in real time. A result demonstrate the use of the MOSFET transistors as a temperature sensor and enables the understanding of the temperature influence on the pH-ISFET response using a FPGA signal acquisition system