Thin SOI IGBT leakage current and a new device structure for high temperature operation

Abstract

This paper describes and compares the temperature dependence of leakage current and on-state resistance of MOSFETs (diodes) and LIGBTs on thin SOI. The leakage current decreases effectively as the SOI layer thickness decreases. The forward voltage-drop of IGBTs on thin SOI is not significantly deteriorated at a high temperature, such as 200/spl deg/C. On the other hand, switching speed improves as the SOI layer thickness decreases. Thus, a thin SOI device is a good candidate for high temperature operation.