R. Kúdela, M. Morvic, M. Kučera, S. Kicin, J. Novák
{"title":"Electrical properties of 2DEG in GaAs/InGaP based structures","authors":"R. Kúdela, M. Morvic, M. Kučera, S. Kicin, J. Novák","doi":"10.1109/ASDAM.2000.889486","DOIUrl":null,"url":null,"abstract":"Electrical properties of 2DEGs in GaAs/InGaP structures were studied in this paper. The structures were grown by LP MOVPE at various temperatures. The influence of growth temperature and the optimisation of the growth process of interfaces on the Hall mobilities were examinated. Correlations between morphology, optical properties and Hall mobilities at 77 K were observed. The thickness of the spacer, which separated the 2DEG channel from the doping region, had also a significant influence on the mobilities. Properties of the structures with GaAs and InGaAs channels are presented. Hall mobilities of 46000 cm/sup 2/V/sup -1/s/sup -1/ were achieved in the GaAs/InGaP structures.","PeriodicalId":303962,"journal":{"name":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2000-10-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"ASDAM 2000. Conference Proceedings. Third International EuroConference on Advanced Semiconductor Devices and Microsystems (Cat. No.00EX386)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASDAM.2000.889486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
Electrical properties of 2DEGs in GaAs/InGaP structures were studied in this paper. The structures were grown by LP MOVPE at various temperatures. The influence of growth temperature and the optimisation of the growth process of interfaces on the Hall mobilities were examinated. Correlations between morphology, optical properties and Hall mobilities at 77 K were observed. The thickness of the spacer, which separated the 2DEG channel from the doping region, had also a significant influence on the mobilities. Properties of the structures with GaAs and InGaAs channels are presented. Hall mobilities of 46000 cm/sup 2/V/sup -1/s/sup -1/ were achieved in the GaAs/InGaP structures.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
