Xu Jin, Huapeng Xiao, Dong Wu, Ning Deng, Huaqiang Wu, Kanyu Cao, H. Qian
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引用次数: 2
Abstract
As more and more demand on high density storage, 3D NAND Flash memories have developed into multi-level cell and triple-level cell. With the charge-trapping technology adopted in 3D NAND Flash, it is possible to achieve quadruple-level-cell (QLC) which brings higher density capability. Meanwhile, the program coding method makes significant impact on the efficiency of the lockout operation in the program verification. A novel speed-up coding method is presented in this paper, which reduces nearly 30% time delay and 40% power consumption during the verify lockout operation in the QLC memory.
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