Jian-Hsing Lee, N. M. Iyer, Haojun Zhang, M. Prabhu, Patrick Cao Li, Guowei Zhang, T. Tsai
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引用次数: 3
Abstract
The fundamental physical mechanism decreasing transistor SOA boundary and ID with the increasing transistor total width is identified and reported for the first time. The skin effect, proximity and Hall-effect arising from the large varying-current are attributed to transistor SOA degradation.
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