Demonstration of frequency doubler application using ZnO-DNTT anti-ambipolar switch device

Abstract

This paper presents the demonstration of an antiambipolar switch (AAS) using a ZnO-dinaphtho[2,3-$b: 2^{\prime}, 3^{\prime}$ ' $f]$ thieno $[3,2-b]$ thiophene (DNTT) heterojunction structure. The proper combination of n-and p-type thin-film semiconductors achieved a high peak-to-valley ratio of $\sim 10^{5}$ at a low process temperature compatible with the back-end-of-line process. Using the electrical characteristic of positive-to-negative transconductance switching at the peak current point, a frequency doubler was implemented with only one device. The excellent electrical performance of the ZnO-DNTT AAS device resulted in a high conversion gain of $-5 \mathrm{~dB}$ and an output frequency purity of 97 %.