Deep red vertical cavity surface emitting lasers with monolithically integrated heterojunction phototransistors for output power control

J. Lott, Hyun-kuk Shin, Yong-Hee Lee
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引用次数: 5

Abstract

Summary form only given. A heterojunction phototransistor is placed within the lower mirror of an AlGaAs DBR QW VCSEL laser. By sampling a small fraction of the internal optical power, the phototransistor controls the laser's continuous wave output power which has an application in optical disc storage systems.
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用单片集成异质结光电晶体管的深红色垂直腔面发射激光器,用于输出功率控制
只提供摘要形式。将异质结光电晶体管置于AlGaAs DBR QW VCSEL激光器的下镜内。光电晶体管通过对内部光功率的一小部分采样,控制激光器的连续波输出功率,在光盘存储系统中有应用。
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Technology and application trends of photonic integrated circuits Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers Effect of process control in oxide-confined top-emitting lasers Experimental analysis of characteristic temperature in quantum-well semiconductor lasers
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