{"title":"Rapid thermal processing (RTP) applied to ion implant anneal for 0.25 /spl mu/m technology","authors":"S. D. Hossain, M. Paś, G. Miner, C. Cleavelin","doi":"10.1109/ASMC.1995.484327","DOIUrl":null,"url":null,"abstract":"The process and machine performance of an ion implantation anneal process performed using a Rapid Thermal Processing (RTP) system for 0.25 /spl mu/m technology are presented. As outlined in the 1994 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors, the 0.25 /spl mu/m devices will require junction depths of 50 to 120 nm and a surface concentration at channel of 1E18 atoms-cm/sup -3/. These requirements for junction depth and surface concentration can only be met by using an RTP for the ion implant anneal. This paper reviews the process performance of the anneal process in terms of sheet resistance, surface and bulk contamination. It also includes the results of an initial and final marathon to qualify the RTP for use in a manufacturing environment.","PeriodicalId":237741,"journal":{"name":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-11-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of SEMI Advanced Semiconductor Manufacturing Conference and Workshop","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ASMC.1995.484327","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The process and machine performance of an ion implantation anneal process performed using a Rapid Thermal Processing (RTP) system for 0.25 /spl mu/m technology are presented. As outlined in the 1994 Semiconductor Industry Association (SIA) National Technology Roadmap for Semiconductors, the 0.25 /spl mu/m devices will require junction depths of 50 to 120 nm and a surface concentration at channel of 1E18 atoms-cm/sup -3/. These requirements for junction depth and surface concentration can only be met by using an RTP for the ion implant anneal. This paper reviews the process performance of the anneal process in terms of sheet resistance, surface and bulk contamination. It also includes the results of an initial and final marathon to qualify the RTP for use in a manufacturing environment.
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