{"title":"Numerical modeling of high sensitivity nanoscale FinFET biosensor for health care applications","authors":"R. Ramesh, K. Kannan, M. Madheswaran","doi":"10.1109/ICEDSS.2016.7587789","DOIUrl":null,"url":null,"abstract":"The development in the field of sensors in general and biosensors in particular has motivated the research in the recent past. The design and fabrication of devices for health care monitoring has drawn attention in the twenty first century. The simulation of the high-k dielectric (HfO2) FinFET biosensor with nano dimension has been carried out and presented in the present paper. Based on the existing literature it has been found that in order to facilitate an easier match with the biological stimulus the HfO2 dielectric FinFET can be preferred. Keeping this in view, the three dimensional numerical simulation of the HfO2 FinFET has been done to study the potential use as sensor for health care applications. The device equations are numerically solved including quantum mechanical effects to estimate the performance of the device for biological applications. The results show that the device characteristics are strongly influenced by the light even if the intensity is very less. The integrated circuit compatibility of the HfO2 FinFET device also enhances the potential use for future biological systems.","PeriodicalId":399107,"journal":{"name":"2016 Conference on Emerging Devices and Smart Systems (ICEDSS)","volume":"10 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-03-04","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 Conference on Emerging Devices and Smart Systems (ICEDSS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICEDSS.2016.7587789","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
The development in the field of sensors in general and biosensors in particular has motivated the research in the recent past. The design and fabrication of devices for health care monitoring has drawn attention in the twenty first century. The simulation of the high-k dielectric (HfO2) FinFET biosensor with nano dimension has been carried out and presented in the present paper. Based on the existing literature it has been found that in order to facilitate an easier match with the biological stimulus the HfO2 dielectric FinFET can be preferred. Keeping this in view, the three dimensional numerical simulation of the HfO2 FinFET has been done to study the potential use as sensor for health care applications. The device equations are numerically solved including quantum mechanical effects to estimate the performance of the device for biological applications. The results show that the device characteristics are strongly influenced by the light even if the intensity is very less. The integrated circuit compatibility of the HfO2 FinFET device also enhances the potential use for future biological systems.