C. Safranski, G. Hu, J. Sun, P. Hashemi, S. Brown, L. Buzi, C. D'Emic, E. Edwards, E. Galligan, M. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, K. Latzko, P. Trouilloud, S. Zare, D. Worledge
{"title":"Reliable Sub-nanosecond MRAM with Double Spin-torque Magnetic Tunnel Junctions","authors":"C. Safranski, G. Hu, J. Sun, P. Hashemi, S. Brown, L. Buzi, C. D'Emic, E. Edwards, E. Galligan, M. Gottwald, O. Gunawan, S. Karimeddiny, H. Jung, J. Kim, K. Latzko, P. Trouilloud, S. Zare, D. Worledge","doi":"10.1109/vlsitechnologyandcir46769.2022.9830306","DOIUrl":null,"url":null,"abstract":"We demonstrate reliable sub-nanosecond switching in two terminal STT-MRAM devices by using Double Spin-torque Magnetic Tunnel Junctions (DS-MTJs). Write-error-rate (WER) of 1E-6 was achieved in 194 devices with 250 ps write pulses and tight distributions. WER = 1E-6 was also demonstrated over a temperature range of -40°C to 85°C in a single device with 225 ps write pulses. No degradation was observed after 1E10 write cycles, written with 250 ps write pulses. We compare the DS-MTJ device switching performance to published results from state-of-the-art three terminal Spin-Orbit-Torque (SOT) MRAM devices and show a 10x reduction in switching current density (Jc) and 3-10x reduction in power consumption for devices with similar energy barriers (Eb).","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830306","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
We demonstrate reliable sub-nanosecond switching in two terminal STT-MRAM devices by using Double Spin-torque Magnetic Tunnel Junctions (DS-MTJs). Write-error-rate (WER) of 1E-6 was achieved in 194 devices with 250 ps write pulses and tight distributions. WER = 1E-6 was also demonstrated over a temperature range of -40°C to 85°C in a single device with 225 ps write pulses. No degradation was observed after 1E10 write cycles, written with 250 ps write pulses. We compare the DS-MTJ device switching performance to published results from state-of-the-art three terminal Spin-Orbit-Torque (SOT) MRAM devices and show a 10x reduction in switching current density (Jc) and 3-10x reduction in power consumption for devices with similar energy barriers (Eb).
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