High-speed modulation characteristics of oxide-apertured vertical-cavity laser

B. Thibeault, K. Bertilsson, E. Hegblom, P. Floyd, L. Coldren
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引用次数: 2

Abstract

Summary form only given. In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 /spl mu/m diameter device. We show that the intrinsic speed is limited to /spl sim/46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.
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氧化孔垂直腔激光器的高速调制特性
只提供摘要形式。本文研究了氧化孔垂直腔InGaAs-GaAs DBR QW激光器的调制特性。在3.1 /spl mu/m直径器件上,仅2.1 mA电流下的带宽为15.3 GHz,最先进的调制电流效率为14 GHz/mA/sup 1/2 /。我们表明,通过增益压缩,固有速度被限制在/spl sim/46 GHz,而10 GHz的寄生限制了当前器件的性能。
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Technology and application trends of photonic integrated circuits Experimental analysis of room-temperature optical gain in GaInN-GaN and GaN-AlGaN double heterostructures and quantum wells Highly efficient selectively oxidized GaAs (/spl lambda/=830 nm) vertical-cavity lasers Effect of process control in oxide-confined top-emitting lasers Experimental analysis of characteristic temperature in quantum-well semiconductor lasers
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