B. Thibeault, K. Bertilsson, E. Hegblom, P. Floyd, L. Coldren
{"title":"High-speed modulation characteristics of oxide-apertured vertical-cavity laser","authors":"B. Thibeault, K. Bertilsson, E. Hegblom, P. Floyd, L. Coldren","doi":"10.1109/ISLC.1996.553727","DOIUrl":null,"url":null,"abstract":"Summary form only given. In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 /spl mu/m diameter device. We show that the intrinsic speed is limited to /spl sim/46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.","PeriodicalId":346992,"journal":{"name":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"1996-10-13","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Digest. 15th IEEE International Semiconductor Laser Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISLC.1996.553727","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2
Abstract
Summary form only given. In this paper, we characterize the modulation characteristics of oxide-apertured vertical-cavity InGaAs-GaAs DBR QW lasers. A bandwidth of 15.3 GHz at only 2.1 mA of current with a state-of-the-art modulation current efficiency of 14 GHz/mA/sup 1/2 / is demonstrated for a 3.1 /spl mu/m diameter device. We show that the intrinsic speed is limited to /spl sim/46 GHz by gain compression and that a 10 GHz parasitic limits current device performance.