Q. Yu, H. Then, D. Thomson, Jessica C. Chou, Jeffrey Garrett, I-Lun Huang, I. Momson, Surej Ravikumar, Seahee Hwangbo, A. Latorre-Rey, Ananda Roy, M. Radosavljevic, M. Beumer, P. Koirala, N. Thomas, N. Nair, H. Vora, S. Bader, J. Rode, J. Jensen, S. Rami
{"title":"5G mmWave Power Amplifier and Low-Noise Amplifier in 300mm GaN-on-Si Technology","authors":"Q. Yu, H. Then, D. Thomson, Jessica C. Chou, Jeffrey Garrett, I-Lun Huang, I. Momson, Surej Ravikumar, Seahee Hwangbo, A. Latorre-Rey, Ananda Roy, M. Radosavljevic, M. Beumer, P. Koirala, N. Thomas, N. Nair, H. Vora, S. Bader, J. Rode, J. Jensen, S. Rami","doi":"10.1109/vlsitechnologyandcir46769.2022.9830383","DOIUrl":null,"url":null,"abstract":"This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured Psat, peak PAE, linear gain, and OP1dB of 25dBm, 38.8%, 24.8dB, and 19.8dBm, occupying only 0.079mm2. The LNA achieves 24.6dB gain, 2.9dB noise figure, and -11.4dBm IIP3 at 38GHz. Both circuits are compact and viable candidates for phased arrays in mobile devices. This is industry’s first demonstration of mmWave circuits in 300mm GaN-on-Si technology.","PeriodicalId":332454,"journal":{"name":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2022-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE Symposium on VLSI Technology and Circuits (VLSI Technology and Circuits)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/vlsitechnologyandcir46769.2022.9830383","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 6
Abstract
This paper presents fully integrated power amplifier (PA) and low-noise amplifier (LNA) targeting 5G mmWave band n260 (37GHz-40GHz) in 300mm GaN-on-Si technology. At 39.5GHz, the PA achieves measured Psat, peak PAE, linear gain, and OP1dB of 25dBm, 38.8%, 24.8dB, and 19.8dBm, occupying only 0.079mm2. The LNA achieves 24.6dB gain, 2.9dB noise figure, and -11.4dBm IIP3 at 38GHz. Both circuits are compact and viable candidates for phased arrays in mobile devices. This is industry’s first demonstration of mmWave circuits in 300mm GaN-on-Si technology.