J. Sun, R. Robertazzi, J. Nowak, P. Trouilloud, G. Hu, M. Gaidis, S. Brown, D. Abraham, E. O'Sullivan, W. Gallagher, D. Worledge, A. Kent
{"title":"Spin-torque switchable perpendicular magnetic junctions for solid-state memory","authors":"J. Sun, R. Robertazzi, J. Nowak, P. Trouilloud, G. Hu, M. Gaidis, S. Brown, D. Abraham, E. O'Sullivan, W. Gallagher, D. Worledge, A. Kent","doi":"10.1109/DRC.2011.5994475","DOIUrl":null,"url":null,"abstract":"PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.","PeriodicalId":107059,"journal":{"name":"69th Device Research Conference","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2011-06-20","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"69th Device Research Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.2011.5994475","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 5
Abstract
PMA spin-torque switchable junctions have been demonstrated with lower switching current and faster switching speed compared to IMA devices. They are promising for further technology exploration in solid-state memory applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
