Manufacturing in the 21st century-new concept for 300 mm fab

A. Koike
{"title":"Manufacturing in the 21st century-new concept for 300 mm fab","authors":"A. Koike","doi":"10.1109/VLSIT.2001.934918","DOIUrl":null,"url":null,"abstract":"Trecenti Technologies, Inc. is currently creating the first 300 mm-wafer volume production fab. Our basic objectives are to minimize cycle time with all single-wafer processes and to create a scalable fab that has an optimized expansion unit to satisfy high investment efficiency and flexibility to changing market needs.","PeriodicalId":232773,"journal":{"name":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2001-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"9","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2001 Symposium on VLSI Technology. Digest of Technical Papers (IEEE Cat. No.01 CH37184)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2001.934918","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 9

Abstract

Trecenti Technologies, Inc. is currently creating the first 300 mm-wafer volume production fab. Our basic objectives are to minimize cycle time with all single-wafer processes and to create a scalable fab that has an optimized expansion unit to satisfy high investment efficiency and flexibility to changing market needs.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
制造在21世纪的新概念为300毫米晶圆厂
Trecenti Technologies, Inc.目前正在创建第一个300mm晶圆量产晶圆厂。我们的基本目标是最大限度地缩短所有单晶圆工艺的周期时间,并创建一个可扩展的晶圆厂,该晶圆厂具有优化的扩展单元,以满足高投资效率和灵活性,以适应不断变化的市场需求。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
Asymmetric source/drain extension transistor structure for high performance sub-50 nm gate length CMOS devices Highly manufacturable and high performance SDR/DDR 4 Gb DRAM 50 nm SOI CMOS transistors with ultra shallow junction using laser annealing and pre-amorphization implantation High-performance 157 nm resist based on fluorine-containing polymer A multi-gate dielectric technology using hydrogen pre-treatment for 100 nm generation system-on-a-chip
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:604180095
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1