Laser grooving of semiconductor wafers: Comparing a simplified numerical approach with experiments

Abstract

Laser grooving is used for the singulation of advanced CMOS wafers since it is believed that it exerts lower mechanical stress than traditional blade dicing. The very local heating of wafers, however, might result in high thermal stress around the heat affected zone. In this work we present a model to predict the temperature distribution, material removal, and the resulting stress, in a sandwiched structure of metals and dielectric materials that are commonly found in the back-end of line of semiconductor wafers. Simulation results on realistic three dimensional back-end structures reveal that the presence of metals clearly affects both the ablation depth, and the stress in the material. Experiments showed a similar observation for the ablation depth. The shape of the crater, however, was found to be more uniform than predicted by simulations, which is probably due to the redistribution of molten metal.