Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, A. Shirane, K. Okada
{"title":"A 41-GHz 19.4-dBm PSATCMOS Doherty Power Amplifier for 5G NR Applications","authors":"Zheng Li, Zixin Chen, Qiaoyu Wang, Junqing Liu, Jian Pang, A. Shirane, K. Okada","doi":"10.1109/ICTA56932.2022.9962970","DOIUrl":null,"url":null,"abstract":"In this paper, a 41-GHz Doherty power amplifier (PA) in a standard 65nm CMOS technology is presented for 5G New Radio (NR) applications. The PA implements transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). And the tunable 90° hybrid is proposed for out-put phase compensation. This work achieves a saturated output power (PSAT) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under 1-V power supply. The peak PAE and the PAE at 6-dB out-put power back-off (PBO) are 30.4% and 19.2%, respectively. The core chip area is 0.22 mm2with a static power consumption of 76mW.","PeriodicalId":325602,"journal":{"name":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","volume":"23 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2022-10-28","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2022 IEEE International Conference on Integrated Circuits, Technologies and Applications (ICTA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICTA56932.2022.9962970","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In this paper, a 41-GHz Doherty power amplifier (PA) in a standard 65nm CMOS technology is presented for 5G New Radio (NR) applications. The PA implements transformer-based parallel-combined Doherty structure to enhance the power-added efficiency (PAE). And the tunable 90° hybrid is proposed for out-put phase compensation. This work achieves a saturated output power (PSAT) of 19.4dBm and an OP1dB of 18.6dBm at 41.5GHz under 1-V power supply. The peak PAE and the PAE at 6-dB out-put power back-off (PBO) are 30.4% and 19.2%, respectively. The core chip area is 0.22 mm2with a static power consumption of 76mW.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
