Nathan Gonzales, J. Dinh, D. Lewis, N. Gilbert, Bard Pedersen, D. Kamalanathan, J. Jameson, S. Hollmer
{"title":"An Ultra Low-Power Non-Volatile Memory Design Enabled by Subquantum Conductive-Bridge RAM","authors":"Nathan Gonzales, J. Dinh, D. Lewis, N. Gilbert, Bard Pedersen, D. Kamalanathan, J. Jameson, S. Hollmer","doi":"10.1109/IMW.2016.7493566","DOIUrl":null,"url":null,"abstract":"Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.","PeriodicalId":365759,"journal":{"name":"2016 IEEE 8th International Memory Workshop (IMW)","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2016-05-15","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2016 IEEE 8th International Memory Workshop (IMW)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IMW.2016.7493566","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 4
Abstract
Conductive-bridge RAM (CBRAM) memory cells offer speed, voltage, and energy advantages over floating gate flash cells. Here, we describe a memory design which carries these cell-level advantages up to the product level, achieving 100x lower read and write power and 10x lower standby power than typical flash-based designs.
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