H. Shigematsu, N. Yoshida, M. Sato, N. Hara, T. Hirose, Y. Watanabe
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引用次数: 28
Abstract
We developed a coplanar waveguided-type distributed amplifier for a LiNbO/sub 3/ modulator driver (LN driver) using double-doped AlGaAs/InGaAs/AlGaAs-pseudomorphic High Electron Mobility Transistors (p-HEMTs). By using a stabilization and impedance control technique, we obtained a 45 GHz bandwidth for coplanar waveguided (CPW) lines with a 600 /spl mu/m thick substrate and 54 GHz bandwidth for grounded coplanar waveguided (GCPW) lines with a 75 /spl mu/m thick substrate, and a linear 6-Vp-p output at 40 Gb/s. These results indicate that our circuit design technique is suitable for use in fiber-optic communication systems.
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