{"title":"Gauss-Quadrature rule in narrow band MIS structures modeling","authors":"A. E. Nastovjak, V. G. Polovinkin","doi":"10.1109/EDM.2009.5173995","DOIUrl":null,"url":null,"abstract":"In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.","PeriodicalId":262499,"journal":{"name":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","volume":"122 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2009-07-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2009 International Conference and Seminar on Micro/Nanotechnologies and Electron Devices","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/EDM.2009.5173995","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
In the paper Gauss-Quadrature formulas for band carrier concentration and band carrier concentration integral are presented. These integrals can be used for semiconductors electro-physical parameter calculation. Obtained formulas require less machine time in comparison with Simpson method for semiconductor characteristic calculation in the non-parabolic band case.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
