Chao-Kun Lin, J. Geske, A. Bond, Won-Jin Choi, P. Dapkus
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引用次数: 0
Abstract
Vertical cavity surface emitting lasers (VCSELs) with 850 nm emission wavelength are of great interest for short haul optical interconnections because of the compatibility with standard Si or GaAs based receivers. Low current and high wall plug efficiency VCSELs are needed. In this presentation, 850nm GaAs-AlGaAs DBR QW VCSELs using buried Al/sub x/O/sub y/ current apertures with low threshold current and peak optical output of 1.2 mW are reported.
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