Active Variable Gate Drive for Suppressing IGBT Collector Current Overshoot

Yan-Hua Pan, Rui Wang, Lin Liang, Jinyuan Li, Lubin Han, Guoqiang Tan, Yu Chen
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引用次数: 2

Abstract

An active variable gate drive (AVGD) method based on FPGA and comparators for high-power IGBT modules is proposed in this paper to suppress IGBT collector current overshoot. Since conventional way that using larger gate resistor will limit the switching speed and increase switching loss, a variable gate drive is presented to change the gate resistor value in different stages during turn-on process which are identified more accurately by an innovative stage detection method using comparator feedbacks under the control of FPGA. The control response is ultra-fast that IGBT gate charging speed will slow down in time during the specific current rising process. Consequently, compared to conventional way, the current overshoot can be effectively suppressed and switching loss can be reduced as well. In order to verify the feasibility of the proposed AVGD method, a double-pulse experiment is conducted on a 1200V/400A IGBT module finally.
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抑制IGBT集电极电流超调的有源可变栅极驱动
提出了一种基于FPGA和比较器的高功率IGBT模块有源可变门驱动(AVGD)方法,用于抑制IGBT集电极电流过调。针对传统的采用较大栅极电阻会限制开关速度和增加开关损耗的问题,提出了一种可变栅极驱动器来改变导通过程中不同阶段的栅极电阻值,并在FPGA控制下采用比较器反馈的创新阶段检测方法来更准确地识别导通过程中的栅极电阻值。控制响应超快,在特定的电流上升过程中,IGBT栅极充电速度会及时减慢。因此,与传统方法相比,可以有效地抑制电流超调,降低开关损耗。为了验证AVGD方法的可行性,最后在1200V/400A的IGBT模块上进行了双脉冲实验。
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