A Robust and Efficient Pre-Silicon Validation Environment for Mixed-Signal Circuits on Intel's Test Chips

N. August
{"title":"A Robust and Efficient Pre-Silicon Validation Environment for Mixed-Signal Circuits on Intel's Test Chips","authors":"N. August","doi":"10.1109/ISQED.2008.40","DOIUrl":null,"url":null,"abstract":"In the past, it was possible to validate analog CMOS circuits through transistor-level (schematic netlist) simulation. As manufacturing processes grow in complexity, the ever-increasing amount of design-for-test/manufacturability/yield/quality (DFx) circuitry renders transistor-level simulation impractical; and digital behavioral simulation ignores crucial analog interactions. This paper presents a more robust and efficient methodology for pre-silicon validation of such mixed-signal circuits. We adopt a top-down strategy and model all blocks at the behavioral level. However, we also represent select analog blocks at the transistor level. This strategy precludes the need for what is currently a weakness in mixed-signal validation - equivalence checking between analog behavioral models and analog schematics. In addition, this strategy enables performance validation to be seamlessly integrated with functional validation. Further, by leveraging the industry standard languages of SPICE, System Verilog and Verilog-AMS, we are able to build and simulate all modeling and validation constructs with a single tool. On Intel's most recent test chip, our validation methodology found more bugs with fewer person-hours than previous attempts with purely digital or transistor-level validation.","PeriodicalId":243121,"journal":{"name":"9th International Symposium on Quality Electronic Design (isqed 2008)","volume":"609 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2008-03-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"2","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"9th International Symposium on Quality Electronic Design (isqed 2008)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ISQED.2008.40","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 2

Abstract

In the past, it was possible to validate analog CMOS circuits through transistor-level (schematic netlist) simulation. As manufacturing processes grow in complexity, the ever-increasing amount of design-for-test/manufacturability/yield/quality (DFx) circuitry renders transistor-level simulation impractical; and digital behavioral simulation ignores crucial analog interactions. This paper presents a more robust and efficient methodology for pre-silicon validation of such mixed-signal circuits. We adopt a top-down strategy and model all blocks at the behavioral level. However, we also represent select analog blocks at the transistor level. This strategy precludes the need for what is currently a weakness in mixed-signal validation - equivalence checking between analog behavioral models and analog schematics. In addition, this strategy enables performance validation to be seamlessly integrated with functional validation. Further, by leveraging the industry standard languages of SPICE, System Verilog and Verilog-AMS, we are able to build and simulate all modeling and validation constructs with a single tool. On Intel's most recent test chip, our validation methodology found more bugs with fewer person-hours than previous attempts with purely digital or transistor-level validation.
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
英特尔测试芯片上混合信号电路鲁棒高效的预硅验证环境
在过去,可以通过晶体管级(原理图网表)仿真来验证模拟CMOS电路。随着制造过程变得越来越复杂,测试设计/可制造性/良率/质量(DFx)电路的数量不断增加,使得晶体管级模拟变得不切实际;数字行为模拟忽略了关键的模拟交互。本文提出了一种更稳健和有效的方法来对这种混合信号电路进行预硅验证。我们采用自顶向下的策略,并在行为层面对所有块进行建模。然而,我们也表示在晶体管级选择模拟块。该策略排除了目前混合信号验证的一个弱点-模拟行为模型和模拟原理图之间的等效检查。此外,该策略使性能验证能够与功能验证无缝集成。此外,通过利用SPICE、System Verilog和Verilog- ams的行业标准语言,我们能够用一个工具构建和模拟所有建模和验证结构。在英特尔最新的测试芯片上,我们的验证方法比以前使用纯数字或晶体管级验证的尝试用更少的人小时发现了更多的错误。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
求助全文
约1分钟内获得全文 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
A Low Energy Two-Step Successive Approximation Algorithm for ADC Design Robust Analog Design for Automotive Applications by Design Centering with Safe Operating Areas Characterization of Standard Cells for Intra-Cell Mismatch Variations Noise Interaction Between Power Distribution Grids and Substrate Error-Tolerant SRAM Design for Ultra-Low Power Standby Operation
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1